• DocumentCode
    1785791
  • Title

    InP nanowire lasers epitaxially grown on (001) silicon ‘V-groove’ templates

  • Author

    Bin Tian ; Zhechao Wang ; Pantouvaki, M. ; Weiming Guo ; Van Campenhout, J. ; Clement, M. ; Van Thourhout, Dries

  • Author_Institution
    INTEC Dept., Ghent Univ., Ghent, Belgium
  • fYear
    2014
  • fDate
    11-15 May 2014
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We demonstrate an ultra-low threshold nanowire laser monolithically integrated on a (001) silicon substrate. By using a V-groove template we were able to reduce the laser threshold by one order of magnitude (0.19pJ per pulse) compared with our earlier devices and dramatically increased the yield throughout the wafer.
  • Keywords
    III-V semiconductors; indium compounds; integrated optics; nanophotonics; nanowires; semiconductor lasers; (001) silicon V-groove templates; (001) silicon substrate; InP; Si; laser threshold; monolithic integration; ultralow threshold nanowire laser; Epitaxial growth; Indium phosphide; Laser excitation; Pump lasers; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials (IPRM), 26th International Conference on
  • Conference_Location
    Montpellier
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2014.6880557
  • Filename
    6880557
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1785791