High-current-gain InP DHBTs with a passivation ledge demonstrating ft and fmax of over 440 GHz

Author

Kashio, Norihide ; Kurishima, Kenji ; Ida, Minoru ; Matsuzaki, Hideaki

Author_Institution

NTT Photonics Labs., NTT Corp., Atsugi, Japan

fYear

2014

fDate

11-15 May 2014

Firstpage

1

Lastpage

2

Abstract

This paper reports current gain and high-frequency characteristics of InP DHBTs with a passivation ledge and various emitter sizes. With the passivation ledge, current gain of over 40 is maintained even for a 0.25-μm-emitter HBT. The f_t is over 420 GHz for HBTs with emitters ranging from 0.25 to 0.5 μm. On the other hand, the f_max greatly increases from 320 to 440 GHz with decreasing emitter width from 0.5 to 0.25 μm. These results indicate that the 0.25-μm-emitter HBT exhibits balanced high-frequency performance (f_t= 449 GHz and f_max= 440 GHz) while maintaining a current gain of over 40.

Keywords

III-V semiconductors; heterojunction bipolar transistors; indium compounds; passivation; submillimetre wave transistors; DHBT; InP; current gain; frequency 320 GHz; frequency 440 GHz; frequency 449 GHz; passivation ledge; size 0.25 mum to 0.5 mum; Double heterojunction bipolar transistors; Gain; Indium gallium arsenide; Indium phosphide; Passivation; Silicon compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials (IPRM), 26th International Conference on

Conference_Location

Montpellier

Type

conf

DOI

10.1109/ICIPRM.2014.6880564

Filename

6880564