Single balanced down-conversion mixer utilizing indium arsenide nanowire MOSFETs

Author

Berg, Markus ; Persson, Karl-Magnus ; Lind, Erik ; Sjoland, Henrik ; Wernersson, Lars-Erik

Author_Institution

Dept. of Electr.- & Inf. Technol., Lund Univ., Lund, Sweden

fYear

2014

fDate

11-15 May 2014

Firstpage

1

Lastpage

2

Abstract

We have fabricated single balanced downconversion mixer circuits using InAs nanowire MOSFETs as both active and passive devices. This is achieved by a combination of electron beam lithography and UV-lithography with a line width of 12 μm. The circuits exhibit a low frequency voltage conversion gain of 6 dB, a -3 dB cutoff frequency of 2 GHz and a power consumption of 3.8 mW, while operating at a supply voltage of 1.5 V. The circuits retain circuit functionality even for a supply voltage of 1 V.

Keywords

III-V semiconductors; MOSFET; active networks; electron beam lithography; indium compounds; low-power electronics; mixers (circuits); nanowires; passive networks; ultraviolet lithography; InAs; UV-lithography; active devices; electron beam lithography; gain 6 dB; indium arsenide nanowire MOSFETs; low frequency voltage conversion gain; passive devices; power 3.8 mW; power consumption; single balanced down-conversion mixer circuits; voltage 1 V; voltage 1.5 V; Gain; Logic gates; MOSFET; Metals; Mixers; Performance evaluation; Voltage measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials (IPRM), 26th International Conference on

Conference_Location

Montpellier

Type

conf

DOI

10.1109/ICIPRM.2014.6880569

Filename

6880569