GaAs layers grown on silicon substrates by MBE for photovoltaic application

Author

Petrushkov, Mikhail O. ; Emelyanov, Eugene A. ; Pakhanov, Nikolai A. ; Preobrazhenskii, Valerii V. ; Putyato, Mikhail A. ; Pchelyakov, Oleg P.

Author_Institution

Novosibirsk State Tech. Univ., Novosibirsk, Russia

fYear

2014

fDate

June 30 2014-July 4 2014

Firstpage

45

Lastpage

50

Abstract

Unijunction GaAs solar cells structures were grown on buffer GaAs/GaP/Si layers. The buffer layers were different in their crystallographic orientation ((001 or 00-1)), presence or absence of dislocation filters, also number of thermocycling operations. Solar cells without a antireflection coating were fabricated, and their characteristics were measured. Some perspective directions for improving the quality of layers GaAs/Si offered based on the experimental data and analysis of literary sources.

Keywords

III-V semiconductors; antireflection coatings; elemental semiconductors; gallium arsenide; molecular beam epitaxial growth; silicon; solar cells; GaAs-GaP-Si; MBE; antireflection coating; crystallographic orientation; dislocation filters; photovoltaic; solar cells; thermocycling operations; Buffer layers; Epitaxial growth; Gallium arsenide; Silicon; Substrates; Surface morphology; GaAs; MBE; silicon substrate; solar cells;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro/Nanotechnologies and Electron Devices (EDM), 2014 15th International Conference of Young Specialists on

Conference_Location

Novosibirsk

ISSN

2325-4173

Print_ISBN

978-1-4799-4669-3

Type

conf

DOI

10.1109/EDM.2014.6882474

Filename

6882474