• DocumentCode
    1787819
  • Title

    Examination of catalytic GaAs nanowire growth by Monte Carlo simulation

  • Author

    Knyazeva, Maria V. ; Shwartz, Nataliya L.

  • Author_Institution
    Novosibirsk State Tech. Univ., Novosibirsk, Russia
  • fYear
    2014
  • fDate
    June 30 2014-July 4 2014
  • Firstpage
    54
  • Lastpage
    56
  • Abstract
    Examination of catalytic GaAs nanowire growth using Monte Carlo simulation was fulfilled. It was demonstrated that characteristics of NW growth were crucially depended on arsenic to gallium flux ratio. NW grew only starting from certain FAs2/FGa value. With following FAs2/FGa raise NW growth rate increased and then saturated. Optimal temperature, ratio of gallium and arsenic flux intensities corresponding to maximal GaAs NW growth rate were detected.
  • Keywords
    III-V semiconductors; Monte Carlo methods; catalysis; gallium arsenide; nanofabrication; nanowires; semiconductor growth; GaAs; Monte Carlo simulation; arsenic-to-gallium flux ratio; catalytic gallium arsenide nanowire growth; optimal temperature; Gallium; Gallium arsenide; Gold; Monte Carlo methods; Nanoscale devices; Surface morphology; Wires; GaAs; Monte Carlo; nanowire; simulation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro/Nanotechnologies and Electron Devices (EDM), 2014 15th International Conference of Young Specialists on
  • Conference_Location
    Novosibirsk
  • ISSN
    2325-4173
  • Print_ISBN
    978-1-4799-4669-3
  • Type

    conf

  • DOI
    10.1109/EDM.2014.6882476
  • Filename
    6882476
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1787819