Ring and coupled ring oscillator in subthreshold region

Author

Pandey, Narendra ; Pandey, Rashmi ; Mittal, Trisha ; Gupta, Kunal ; Pandey, Rashmi

Author_Institution

Dept. of Electron. & Commun., Delhi Technol. Univ., New Delhi, India

fYear

2014

fDate

12-13 July 2014

Firstpage

132

Lastpage

136

Abstract

In this paper, the implementation of oscillators in the subthreshold region is proposed. The ring and coupled ring oscillators are implemented. The technique of swapped body biasing technique has been introduced for coupled ring oscillators to enhance their performance. The functionality of the oscillators in subthreshold region is verified through simulations using 180 nm TSMC CMOS technology parameters. A comparison in performance of the oscillators is carried out. It is found that coupled ring oscillator based on the swapped body biasing shows the best performance with the frequency of oscillation, power and propagation delay as 19.79 MHz, 973 nW and 12.84 ns respectively.

Keywords

CMOS analogue integrated circuits; oscillators; TSMC CMOS technology parameters; coupled ring oscillator; frequency 19.79 MHz; power 973 nW; propagation delay; ring oscillator; size 180 nm; subthreshold region; swapped body biasing technique; time 12.84 ns; CMOS integrated circuits; CMOS technology; Capacitance; MOS devices; Oscillators; Propagation delay; Synthesizers; Coupled Ring Oscillator; Ring oscillator; Subthreshold region; Swapped Body Biasing;

fLanguage

English

Publisher

ieee

Conference_Titel

Signal Propagation and Computer Technology (ICSPCT), 2014 International Conference on

Conference_Location

Ajmer

Print_ISBN

978-1-4799-3139-2

Type

conf

DOI

10.1109/ICSPCT.2014.6884953

Filename

6884953