• DocumentCode
    1791897
  • Title

    Characterization and Analyses of RadHard-By-Design CMOS Open Drain Quad Comparators

  • Author

    Benson, Ray ; Resch, Paul ; Milanowski, Randall ; Swonger, James

  • Author_Institution
    Aeroflex Microelectric Solutions - HiRel, Plainview, NY, USA
  • fYear
    2014
  • fDate
    14-18 July 2014
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    We provide characterization data for Total Ionizing Dose and Single Event effects on a radiation hardened by design quad CMOS comparator. We also present selected results of SPICE simulation analyses of single event transient response.
  • Keywords
    CMOS analogue integrated circuits; comparators (circuits); integrated circuit design; radiation hardening (electronics); RadHard-by-design CMOS open drain quad comparators; SPICE simulation analyses; characterization data; radiation hardening; single event effects; single event transient response; total ionizing dose; CMOS integrated circuits; Electronic mail; Radiation effects; SPICE; Testing; Transient analysis; Voltage measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation Effects Data Workshop (REDW), 2014 IEEE
  • Conference_Location
    Paris
  • Print_ISBN
    978-1-4799-5883-2
  • Type

    conf

  • DOI
    10.1109/REDW.2014.7004555
  • Filename
    7004555
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1791897