• DocumentCode
    1791952
  • Title

    Radiation Effects Characterization of a High Density SSRAM

  • Author

    Hafer, C. ; Mabra, J. ; Mnich, C. ; Leslie, M. ; Jordan, A.

  • fYear
    2014
  • fDate
    14-18 July 2014
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    A high density 64/80/96-Mbit SSRAM has been designed, manufactured, and characterized for radiation effects. The device is SEL immune, has an error rate less than 1x10-15 errors/bit-day, and is TID tolerant to 100 krad(Si).
  • Keywords
    SRAM chips; radiation hardening (electronics); SEL; TID; bit rate 64 Mbit/s; bit rate 80 Mbit/s; bit rate 96 Mbit/s; error rate; high density SSRAM; radiation effects characterization; total ionizing dose; Oscillators; Phase locked loops; Radiation effects; Single event upsets; Synchronization; Xenon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation Effects Data Workshop (REDW), 2014 IEEE
  • Conference_Location
    Paris
  • Print_ISBN
    978-1-4799-5883-2
  • Type

    conf

  • DOI
    10.1109/REDW.2014.7004581
  • Filename
    7004581
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1791952