• DocumentCode
    1792563
  • Title

    InAs/GaAs quantum dot lasers metal-stripe-bonded onto SOI substrate

  • Author

    Yuan-Hsuan Jhang ; Tanabe, Kazuki ; Iwamoto, Satoshi ; Arakawa, Yasuhiko

  • Author_Institution
    Inst. of Ind. Sci., Univ. of Tokyo, Tokyo, Japan
  • fYear
    2014
  • fDate
    15-16 July 2014
  • Firstpage
    18
  • Lastpage
    18
  • Abstract
    We demonstrate InAs/GaAs quantum dot lasers on silicon-on-insulator substrate with silicon rib structures by metal-stripe wafer bonding technology. The threshold current density of the bonded laser is 880 A/cm2, and the spectrum shows the lasing wavelength around 1.3 μm at room temperature.
  • Keywords
    III-V semiconductors; current density; elemental semiconductors; gallium arsenide; indium compounds; quantum dot lasers; semiconductor quantum dots; silicon; silicon-on-insulator; wafer bonding; InAs-GaAs; SOI substrate; Si; bonded laser; metal-stripe wafer bonding technology; quantum dot laser metal-stripe; silicon rib structures; silicon-on-insulator substrate; temperature 293 K to 298 K; threshold current density; Gallium arsenide; Metals; Quantum dot lasers; Silicon; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Low Temperature Bonding for 3D Integration (LTB-3D), 2014 4th IEEE International Workshop on
  • Conference_Location
    Tokyo
  • Print_ISBN
    978-1-4799-5260-1
  • Type

    conf

  • DOI
    10.1109/LTB-3D.2014.6886157
  • Filename
    6886157
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1792563