DocumentCode
1792570
Title
Epitaxial growth of GaInAsP system on wafer-bonded InP/Si substrate
Author
Matsumoto, Kaname ; Kanaya, Yoshinori ; Kishikawa, Junya ; Shimomura, Kazuya
Author_Institution
Dept. of Eng. & Appl. Sci., Sophia Univ., Tokyo, Japan
fYear
2014
fDate
15-16 July 2014
Firstpage
21
Lastpage
21
Abstract
We report here on the successful transfer of thin film InP epi-layer onto Si substrate using wafer direct bonding technique, to be used as a platform of GaInAsP system growth. Our approach is promising in terms of high density integration of InP-based several functional devices on Si substrate.
Keywords
III-V semiconductors; MOCVD; gallium arsenide; gallium compounds; indium compounds; semiconductor epitaxial layers; semiconductor growth; three-dimensional integrated circuits; vapour phase epitaxial growth; wafer bonding; GaInAsP; InP-Si; MOVPE; Si; epitaxial growth; silicon substrate; wafer direct bonding technique; wafer-bonded InP/Si substrate; Epitaxial growth; Epitaxial layers; Indium phosphide; Quantum well devices; Silicon; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Low Temperature Bonding for 3D Integration (LTB-3D), 2014 4th IEEE International Workshop on
Conference_Location
Tokyo
Print_ISBN
978-1-4799-5260-1
Type
conf
DOI
10.1109/LTB-3D.2014.6886160
Filename
6886160
Link To Document