• DocumentCode
    1792631
  • Title

    Investigation on the effects of annealing process on the electrical properties of n+-Si/n-SiC junctions

  • Author

    Jianbo Liang ; Nishida, Shuichi ; Hayashi, Teruaki ; Morimoto, Masayuki ; Shigekawa, Naoteru ; Arai, Manabu

  • Author_Institution
    Dept. of Appl. Phys. & Electron., Osaka City Univ., Osaka, Japan
  • fYear
    2014
  • fDate
    15-16 July 2014
  • Firstpage
    53
  • Lastpage
    53
  • Abstract
    The effects of annealing process on the electrical properties of n+-Si/n-SiC junctions fabricated by using surface-activated bonding are investigated. It is found by measuring their current-voltage (I-V) characteristics that the reverse-bias current decreases and activation energy increases with increasing annealing temperature to 700 °C.
  • Keywords
    annealing; elemental semiconductors; integrated circuit bonding; semiconductor heterojunctions; silicon; silicon compounds; surface treatment; three-dimensional integrated circuits; wide band gap semiconductors; Si-SiC; activation energy; annealing process; current-voltage characteristics; electrical properties; n+-Si/n-SiC junctions; reverse-bias current; surface-activated bonding; temperature 700 degC; Annealing; Bonding; Current measurement; Junctions; Silicon; Silicon carbide; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Low Temperature Bonding for 3D Integration (LTB-3D), 2014 4th IEEE International Workshop on
  • Conference_Location
    Tokyo
  • Print_ISBN
    978-1-4799-5260-1
  • Type

    conf

  • DOI
    10.1109/LTB-3D.2014.6886192
  • Filename
    6886192
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1792631