Epitaxially intergrated power efficient switch for high power laser pulse generation in semiconductor heterostructures of 900 nm wavelength

Author

Slipchenko, Sergey O. ; Podoskin, Aleksandr A. ; Rozhkov, Alexsander V. ; Pikhtin, Nikita A. ; Tarasov, Ilya S. ; Bagaev, Timur A. ; Zverkov, M.V. ; Konyaev, V.P. ; Kurniavko, Y.V. ; Ladugin, Maxim A. ; Marmalyuk, Aleksandr A. ; Padalitsa, Anatoliy A. ; S

Author_Institution

Ioffe Phys.-Tech. Inst., St. Petersburg, Russia

fYear

2014

fDate

June 30 2014-July 4 2014

Firstpage

1

Lastpage

1

Abstract

New type of high power laser pulse generator of ns-range duration based on epitaxial intergration of laser heterostructure into thyristor heterostructure has been investigated. Generation of laser pulse of 28W amplitude is done by applying a control current pulse with amplitude of 3.4 A/cm² only. The minimal energy of control signal reaches 1,4 nJ.

Keywords

optical pulse generation; optical switches; semiconductor heterojunctions; semiconductor lasers; control current pulse; epitaxially integrated power efficient switch; high power laser pulse generation; minimal control signal energy; power 28 W; semiconductor heterostructures; thyristor heterostructure; wavelength 900 nm; Epitaxial growth; Pump lasers; laser-thyristor; pulse laser diode;

fLanguage

English

Publisher

ieee

Conference_Titel

Laser Optics, 2014 International Conference

Conference_Location

Saint Petersburg

Print_ISBN

978-1-4799-3884-1

Type

conf

DOI

10.1109/LO.2014.6886288

Filename

6886288