DocumentCode
1793294
Title
Ultra-small butt-joint Ge photodetector featuring self-aligned in-situ doping and CMP-free novel CVD process
Author
Miura, Masaki ; Fujikata, J. ; Noguchi, M. ; Arakawa, Yasuhiko
Author_Institution
Inst. for Photonics-Electron. Convergence Syst. Technol., Japan
fYear
2014
fDate
9-13 March 2014
Firstpage
1
Lastpage
3
Abstract
Ultra-small butt-joint germanium photodetector featuring self-aligned in-situ doping was realized with drastically decreased process number based on novel CVD method. The photodetector showed prominently increased 3 dB bandwidth at zero bias (35 GHz).
Keywords
chemical mechanical polishing; chemical vapour deposition; elemental semiconductors; germanium; photodetectors; semiconductor doping; CMP-free novel CVD process; Ge; bandwidth 35 GHz; chemical mechanical polishing; self-aligned in-situ doping; ultra-small butt-joint germanium photodetector; Bandwidth; Couplings; Etching; Metals; Optical waveguides; Photodetectors; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Fiber Communications Conference and Exhibition (OFC), 2014
Conference_Location
San Francisco, CA
Print_ISBN
978-1-5575-2994-7
Type
conf
DOI
10.1364/OFC.2014.M2G.5
Filename
6886551
Link To Document