Ultra-small, low-crosstalk, electrically-driven InGaAsP photonic-wire optical switches on III–V CMOS photonics platform

Author

Ikku, Yuki ; Yokoyama, Masafumi ; Ichikawa, Osamu ; Osada, Takenori ; Hata, Masaharu ; Takenaka, Mitsuru ; Takagi, Shinichi

Author_Institution

Dept. of Electr. Eng. & Inf. Syst., Univ. of Tokyo, Tokyo, Japan

fYear

2014

fDate

9-13 March 2014

Firstpage

1

Lastpage

3

Abstract

Ultra-small, electrically-driven InGaAsP photonic-wire optical switches are demonstrated. Large carrier-induced index change in InGaAsP enables low crosstalk of -29 dB even with 50-μm-long phase shifters. 50-Gb/s WDM signals are successfully transmitted within 2-dB power penalty.

Keywords

CMOS integrated circuits; III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; integrated optoelectronics; optical crosstalk; optical phase shifters; optical switches; wavelength division multiplexing; III-V CMOS photonics platform; InGaAsP; WDM signals; bit rate 50 Gbit/s; carrier-induced index change; electrically-driven photonic-wire optical switches; low-crosstalk photonic-wire optical switches; phase shifters; size 50 mum; ultra-small photonic-wire optical switches; Crosstalk; Optical switches; Optical waveguides; Phase shifters; Photonics; Refractive index; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Optical Fiber Communications Conference and Exhibition (OFC), 2014

Conference_Location

San Francisco, CA

Print_ISBN

978-1-5575-2994-7

Type

conf

DOI

10.1364/OFC.2014.Th2A.66

Filename

6886749