DocumentCode
1795881
Title
The influence of quantum-well depth on the optical modulation bandwidth of light emitting transistors
Author
Yuan-Fu Hsu ; Hao-Hsiang Yang ; Chao-Hsin Wu
Author_Institution
Grad. Inst. of Phontonics & Optoelectron., Nat. Taiwan Univ., Taipei, Taiwan
fYear
2014
fDate
6-10 July 2014
Firstpage
501
Lastpage
503
Abstract
We investigate the optical bandwidth of light-emitting transistor by incorporating different depth of quantum wells (QWs). Shallower QWs emit relatively smaller optical output but perform better optical response. and have investigated the electrical and optical performance of HBLET.
Keywords
heterojunction bipolar transistors; light emitting devices; optical modulation; quantum well devices; HBLET; electrical performance; hetrojunction bipolar transistor; light emitting transistors; optical modulation bandwidth; optical output; optical performance; optical response; quantum-well depth; Optical buffering; Optical device fabrication; Optical fibers; Optical modulation; Radiative recombination; Stimulated emission; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Fibre Technology, 2014 OptoElectronics and Communication Conference and Australian Conference on
Conference_Location
Melbourne, VIC
Type
conf
Filename
6888161
Link To Document