DocumentCode
1798267
Title
Electro-migration behavior in fine pitch SnBi eutectic solder bump interconnections
Author
Murayama, Kei ; Aizawa, Mitsuhiro ; Kurihara, Takashi
Author_Institution
R&D Div., Interconnect Technol. Dev. Dept., Shinko Electr. Ind. Co., Ltd., Nagano, Japan
fYear
2014
fDate
4-6 Nov. 2014
Firstpage
71
Lastpage
74
Abstract
Electro-migration behavior in fine pitch SnBi eutectic solder bump interconnections were investigated. In the case of fine pitch SnBi eutectic solder bump (dia. 25 micro meter), maximum increasing-rate of resistance was significant less than that of larger seized bump structure (Dia. 75 micro meter).
Keywords
electromigration; integrated circuit interconnections; solders; tin compounds; electromigration behavior; fine pitch SnBi eutectic solder bump interconnections; size 25 mum; size 75 mum; Bismuth; Current density; Gold; Nickel; Resistance; Substrates; Tin; Electro-migration; Fine pitch bump; SnBi solder;
fLanguage
English
Publisher
ieee
Conference_Titel
CPMT Symposium Japan (ICSJ), 2014 IEEE
Conference_Location
Kyoto
Print_ISBN
978-1-4799-6194-8
Type
conf
DOI
10.1109/ICSJ.2014.7009612
Filename
7009612
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