DocumentCode
1801021
Title
Reliability, test, and I/sub DDQ/ measurements
Author
Hawkins, C.F. ; Keshavarzi, A. ; Soden, J.M.
Author_Institution
Dept. of Electr. Eng. & Comput. Eng., New Mexico Univ., Albuquerque, NM, USA
fYear
1997
fDate
5-6 Nov. 1997
Firstpage
96
Lastpage
102
Abstract
I/sub DDQ/ measurements are strongly identified with CMOS IC testing, however I/sub DDQ/ also has long term links to IC reliability. This paper overviews the association of reliability and I/sub DDQ/ testing. Three reliability topics are discussed: fundamental failure mechanisms, the relation of I/sub DDQ/ to burn-in, and the use of test data to predict reliability performance.
Keywords
CMOS integrated circuits; CMOS IC testing; I/sub DDQ/ measurements; IC reliability; burn-in; fundamental failure mechanisms; test data; Artificial intelligence; Atomic layer deposition; CMOS integrated circuits; Current density; Electromigration; Electrons; Failure analysis; Grain boundaries; Temperature; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
IDDQ Testing, 1997. Digest of Papers., IEEE International Workshop on
Conference_Location
Washington, DC, USA
Print_ISBN
0-8186-8123-3
Type
conf
DOI
10.1109/IDDQ.1997.633021
Filename
633021
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