• DocumentCode
    1801557
  • Title

    Total-dose and SEU results for the AD8001, a high-performance commercial op-amp fabricated in a dielectrically-isolated, complementary-bipolar process

  • Author

    DeLaus, Michael ; Combs, William

  • Author_Institution
    Analog Devices Semiconductor, Wilmington, MA, USA
  • fYear
    1994
  • fDate
    34535
  • Firstpage
    104
  • Lastpage
    109
  • Abstract
    Radiation test results are presented for the AD8001. This part is a state-of-the-art commercial op-amp fabricated on an advanced dielectrically-isolated process featuring lateral trench isolation and a bonded wafer substrate. Both cobalt-60 and SEU results are discussed. No total-dose failures were seen for exposures of >1Mrad(Si). No single-event induced latchup was observed up to the maximum LET (82.0 Mev-cm2/mg) used in this study.
  • Keywords
    bipolar analogue integrated circuits; integrated circuit testing; ion beam effects; isolation technology; neutron effects; operational amplifiers; proton effects; 1 Mrad; AD8001; SEU results; bonded wafer substrate; cobalt-60 results; dielectrically-isolated complementary-bipolar process; lateral trench isolation; maximum LET; op-amp; radiation test results; total-dose results; Circuit testing; Costs; Cranes; Dielectric devices; Dielectric substrates; Ionizing radiation; Operational amplifiers; Resistors; Single event upset; Space technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation Effects Data Workshop, 1994 IEEE
  • Print_ISBN
    0-7803-2022-0
  • Type

    conf

  • DOI
    10.1109/REDW.1994.633042
  • Filename
    633042
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1801557