DocumentCode
1802593
Title
A field effect transistor type gas sensor based on polyaniline
Author
Lee, Sang-Mun ; Uhm, Sang-Jin ; Bang, Jung-Il ; Song, Kap-Duk ; Joo, Byung-Su ; Lee, Yun-Su ; Lee, Duk-Dong
Author_Institution
Sch. of Electron. & Electr. Eng., Kyungpook Nat. Univ., Taegu, South Korea
Volume
2
fYear
2005
fDate
5-9 June 2005
Firstpage
1935
Abstract
The researched sensor at this paper is based on gas sensitive conducting polymer. Some types of conducting polymer have gas sensitivity at room temperature (Matsuguchi et al., 2002). These conducting polymers have several shortages such as low sensitivity. The transistor type gas sensor has been studied for several decades. These sensors are based on metal oxide ceramics such as tin dioxide (Wollenstein et al., 2000 and Popova et al., 1991). We researched a polymer FET gas sensor. The sensor structure is similar to thin film transistor (TFT) one. This sensor can detect very low concentration of ammonia gas. The synthesized polyaniline has the resistance change for ammonia gas. Normally IDT electrode resistor sensor can detect several decade ppm or more ammonia gas. The FET type sensor which has the same polyaniline film can detect 5 ppm of ammonia.
Keywords
conducting polymers; field effect transistors; gas sensors; sensitivity; IDT electrode resistor sensor; ammonia gas; conducting polymer; field effect transistor; gas sensitivity; metal oxide ceramics; polyaniline film; polymer FET gas sensor; sensor structure; thin film transistor; tin dioxide; Ceramics; Electrodes; FETs; Gas detectors; Polymers; Resistors; Temperature sensors; Thin film sensors; Thin film transistors; Tin;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05. The 13th International Conference on
Print_ISBN
0-7803-8994-8
Type
conf
DOI
10.1109/SENSOR.2005.1497477
Filename
1497477
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