A novel 0.15-μm high-aspect-Ratio T-shaped gate fabrication process using a 248nm DUV stepper

Author

Wang, Shuai ; Lin, Gang ; Chen, Tangsheng

Author_Institution

Nat. Key Lab. of Monolithic Integrated Circuits & Modules, Nanjing Electron. Devices Inst., Nanjing

Volume

1

fYear

2008

fDate

21-24 April 2008

Firstpage

159

Lastpage

162

Abstract

A 0.15 mum GaAs-based PHEMT process on 100 mm wafers using 248 nm stepper based technology for millimeter wave applications is developed. This process shows improved throughput and yield compared to traditional E-beam lithography based process. 0.15 mum PHEMTs with high-aspect-ratio (ap4.5) gates are successfully fabricated using this process, exhibiting a good millimeter-wave performance with a f_t of 82.7 GHz and a power gain greater than 15dB at 12 GHz.

Keywords

III-V semiconductors; electron beam lithography; gallium arsenide; high electron mobility transistors; millimetre wave transistors; DUV stepper; E-beam lithography process; GaAs-based PHEMT process; T-shaped gate fabrication process; millimeter wave applications; size 0.15 mum; size 100 mm; size 248 nm; Cutoff frequency; Fabrication; Filling; Laboratories; Lithography; Millimeter wave technology; PHEMTs; Parasitic capacitance; Passivation; Throughput;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Technology, 2008. ICMMT 2008. International Conference on

Conference_Location

Nanjing

Print_ISBN

978-1-4244-1879-4

Electronic_ISBN

978-1-4244-1880-0

Type

conf

DOI

10.1109/ICMMT.2008.4540329

Filename

4540329