DocumentCode
1803502
Title
Using molecular monolayers as self-assembled photoresist
Author
Lafleur, Lisa K. ; Dong, Jianchun ; Parviz, Babak A.
Author_Institution
Dept. of Electr. Eng., Washington Univ., Seattle, WA, USA
Volume
2
fYear
2005
fDate
5-9 June 2005
Firstpage
2052
Abstract
The authors investigated the use of a self-assembled monolayer (SAM) of molecules as resist for photolithography. The SAM constitutes an atomically uniform photosensitive layer with the nominal thickness of 1-2 nm. This molecular monolayer can be patterned by selective exposure to UV light. The removal of the molecules was characterized from the surface with x-ray photoelectron spectroscopy (XPS). Various post processing methods was investigated on the surface patterned with molecules including wet etching and polymer self-assembly based on surface energy difference. An organic field effect transistor (OFET) fabricated using the lithography system was presented and discussed the potential for making devices directly with the molecules that participate in the lithography scheme.
Keywords
X-ray photoelectron spectra; monolayers; photoresists; polymer films; self-assembly; ultraviolet lithography; 1 to 2 nm; molecular monolayers; organic field effect transistor; photolithography; photosensitive layer; polymer self assembly; self assembled photoresist; surface energy difference; wet etching; x-ray photoelectron spectroscopy; Atomic layer deposition; Lithography; OFETs; Plasmons; Polymer films; Resists; Self-assembly; Spectroscopy; Substrates; Wet etching;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05. The 13th International Conference on
Print_ISBN
0-7803-8994-8
Type
conf
DOI
10.1109/SENSOR.2005.1497506
Filename
1497506
Link To Document