• DocumentCode
    180406
  • Title

    Advanced Process and Modeling on 600+ GHz Emitter Ledge Type-II GaAsSb/InP DHBT

  • Author

    Huiming Xu ; Wu, Bin ; Winoto, Ardy ; Feng, Ming

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Illinois at Urbana-Champaign, Urbana, IL, USA
  • fYear
    2014
  • fDate
    19-22 Oct. 2014
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    An AlInP emitter ledge (EL) has been developed for a Type-II GaAsSb/InP DHBT with doping-graded base. The AlInP emitter ledge has effectively reduced emitter peripheral surface recombination current, thus improving current gain. A 0.25 x 5 μm2 device has demonstrated maximum current gain β = 24, BVCEO = 6.3 V and fT/fMAX = 480/620 GHz. RF performances of 600+ GHz Type II DHBTs with and without emitter ledge have also been compared.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; heterojunction bipolar transistors; indium compounds; semiconductor device models; surface recombination; AlInP; GaAsSb-InP; doping graded base; emitter ledge type II DHBT; emitter peripheral surface recombination current; frequency 480 GHz; frequency 620 GHz; voltage 6.3 V; Color; Current density; DH-HEMTs; Indium phosphide; Metals; Performance evaluation; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Compound Semiconductor Integrated Circuit Symposium (CSICs), 2014 IEEE
  • Conference_Location
    La Jolla, CA
  • Type

    conf

  • DOI
    10.1109/CSICS.2014.6978537
  • Filename
    6978537
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=180406