• DocumentCode
    180492
  • Title

    Status of the GaN HEMT Standardization Effort at the Compact Model Coalition

  • Author

    Mertens, Samuel D.

  • Author_Institution
    Keysight EEsof EDA, Santa Clara, CA, USA
  • fYear
    2014
  • fDate
    19-22 Oct. 2014
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    The Compact Model Coalition (CMC), a part of the Silicon Integration Initiative (Si2), is standardizing a compact model for Gallium Nitride High Electron Mobility Transistors (GaN HEMTs). After a global search for model candidates, eight were selected to present at a CMC meeting. In the next phase, selected candidates will be evaluated for their ability to fit a common set of hardware data. After a third round of more comprehensive testing, a standard GaN HEMT model will be selected.
  • Keywords
    III-V semiconductors; gallium compounds; high electron mobility transistors; semiconductor device models; standardisation; wide band gap semiconductors; GaN; HEMT standardization; compact model coalition; high electron mobility transistors; silicon integration initiative; Gallium nitride; HEMTs; Integrated circuit modeling; Semiconductor device modeling; Semiconductor process modeling; Standards;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Compound Semiconductor Integrated Circuit Symposium (CSICs), 2014 IEEE
  • Conference_Location
    La Jolla, CA
  • Type

    conf

  • DOI
    10.1109/CSICS.2014.6978580
  • Filename
    6978580