Position monolithic silicon detector telescope: simulation results

The collaboration between ST Microelectronics, INFN LNS and Catania University gave birth to the design of a monolithic silicon ΔE-E detector telescope in the last years. Using ion implantation techniques, the ΔE stage of that telescope was integrated on the same silicon E detector and an ultra thin ΔE stage (≈ 1 μm thick) with an excellent charge resolution for low energy (less than 5 MeV) ions was obtained. The positive experience, we got from that already developed silicon monolithic ΔE-E telescope, encouraged its to work on a new generation detector. Our aim is to develop a large area "multidetector" device able to give not only a good charge resolution for low energy ions but also position information. The feasibility of this kind of detector has been verified by 2D simulations carried out by DESSIS ISE^(*) device simulator.