DocumentCode
1807077
Title
Hot carrier and soft breakdown reliability for RF circuits
Author
Xiao, Enjun ; Yuan, Jim S. ; Yang, Hong
Author_Institution
Sch. of Electr. Eng. & Comput. Sci., Univ. of Central Florida, Orlando, FL, USA
fYear
2002
fDate
19-21 Dec. 2002
Firstpage
243
Lastpage
246
Abstract
RF circuit performance degradations due to hot carrier (HC) and soft breakdown (SBD) effects are studied with 0.16 μm CMOS technology. Two design techniques are proposed to reduce the HC and SBD effects on RF circuits. A low noise amplifier (LNA) and a voltage-controlled oscillator (VCO) are used to verify the design techniques that can be used to build more reliable RF circuits.
Keywords
CMOS integrated circuits; MOSFET; amplifiers; hot carriers; integrated circuit reliability; radiofrequency integrated circuits; voltage-controlled oscillators; 0.16 micron; CMOS technology; RF circuits; VCO; hot carrier; noise amplifier; soft breakdown reliability; voltage controlled oscillator; CMOS technology; Circuit noise; Circuit optimization; Degradation; Electric breakdown; Hot carriers; Low-noise amplifiers; Radio frequency; Radiofrequency amplifiers; Voltage-controlled oscillators;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Electronics, 2002. Proceedings. ICSE 2002. IEEE International Conference on
Print_ISBN
0-7803-7578-5
Type
conf
DOI
10.1109/SMELEC.2002.1217816
Filename
1217816
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