Modeling of stress-induced leakage current in thin gate oxides

An analytic model of the stress-induced leakage current in thin gate oxides was developed under the assumptions that traps created in the gate oxide during high field injection of electrons have an exponential distribution in energy and transport of the electrons localized in the traps is due to an activated process of motion from one trap to another. The electric field and temperature dependence of the leakage current in a wide range were explained successfully by the model.