• DocumentCode
    1808351
  • Title

    Fundamentals and current status of steep-slope tunnel field-effect transistors

  • Author

    Seabaugh, Alan

  • Author_Institution
    Dept. of Electr. Eng., Univ. of Notre Dame, Notre Dame, IN, USA
  • fYear
    2011
  • fDate
    12-16 Sept. 2011
  • Firstpage
    59
  • Lastpage
    60
  • Abstract
    The tunnel field-effect transistor (TFET) utilizes a metal-oxide-semiconductor MOS structure to control the Zener tunneling current in a p+n+ junction. Current understanding and status in the development of TFETs with steep inverse-subthreshold-slope is reviewed.
  • Keywords
    MOS integrated circuits; field effect transistors; p-n junctions; tunnel transistors; TFET; Zener tunneling current; metal-oxide-semiconductor MOS structure; p+n+ junction; steep inverse-subthreshold-slope; tunnel field-effect transistor; FETs; Heterojunctions; Logic gates; MOSFET circuits; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    ESSCIRC (ESSCIRC), 2011 Proceedings of the
  • Conference_Location
    Helsinki
  • ISSN
    1930-8833
  • Print_ISBN
    978-1-4577-0703-2
  • Electronic_ISBN
    1930-8833
  • Type

    conf

  • DOI
    10.1109/ESSCIRC.2011.6044914
  • Filename
    6044914
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1808351