A SiGe HBT power amplifier with integrated mode control switches for LTE applications

Author

Jonghun Jung ; Geunyong Lee ; Jong-In Song

Author_Institution

Dept. of Nanobio Mater. & Electron., Gwangju Inst. of Sci. & Technol., Gwangju, South Korea

fYear

2013

fDate

21-23 Jan. 2013

Firstpage

138

Lastpage

140

Abstract

A SiGe HBT mode switching power amplifier (PA) for 835MHz long-term-evolution (LTE) applications has been realized in a BiCMOS technology. The PA has dual 2-stage PAs optimized for operations at high and low power levels. The mode of operation is controlled by NMOS switches integrated with the SiGe HBT PA. The PA shows a power added efficiency (PAE) of 28.3% and an adjacent channel leakage ration (ACLR) of -30.5dBc at the output power of 26dBm. At the low Pout of 16dBm, the PA shows a PAE of 15.8% and an ACLR of -29.7dBc. The PA shows substantially improved efficiency at low power mode operation.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; Long Term Evolution; MOS integrated circuits; bipolar integrated circuits; power amplifiers; BiCMOS; HBT; LTE; Long Term Evolution; NMOS switches; SiGe; adjacent channel leakage ration; frequency 835 MHz; heterojunction bipolar transistors; integrated mode control switches; mode switching power amplifier; power added efficiency; BiCMOS integrated circuits; CMOS integrated circuits; Heterojunction bipolar transistors; Power amplifiers; Silicon germanium; Switches; SiGe power amplifier (PA); long-term evolution (LTE); mode switching;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting on

Conference_Location

Austin, TX

Print_ISBN

978-1-4673-1552-4

Electronic_ISBN

978-1-4673-1551-7

Type

conf

DOI

10.1109/SiRF.2013.6489458

Filename

6489458