DocumentCode
1808658
Title
Class-E power amplifier design at 2.5 GHz using a packaged transistor
Author
Collins, Gayle Fran ; Wood, Jo
Author_Institution
MaXentric Technol., La Jolla, CA, USA
fYear
2013
fDate
21-23 Jan. 2013
Firstpage
159
Lastpage
161
Abstract
A Class-E power amplifier has been designed to operate at 2.5 GHz using a commercial, packaged GaAs pHEMT. The design approach used a novel analysis of the package impedances. The objective was to present optimal harmonic loads to the transistor, using lumped-component matching on commercial PCB material. Using an MRFG35010 plastic packaged transistor, a drain efficiency of 72% with about 3 W output power was achieved at 2.55 GHz.
Keywords
III-V semiconductors; gallium arsenide; high electron mobility transistors; power amplifiers; GaAs; class-E power amplifier design; drain efficiency; frequency 2.5 GHz; lumped-component matching; optimal harmonic loads; pHEMT; package impedances; plastic packaged transistor; Capacitance; Gallium arsenide; Harmonic analysis; Power amplifiers; Resonant frequency; Switches; Transistors; Class-E; Power amplifier; high efficiency; switching amplifier;
fLanguage
English
Publisher
ieee
Conference_Titel
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting on
Conference_Location
Austin, TX
Print_ISBN
978-1-4673-1552-4
Electronic_ISBN
978-1-4673-1551-7
Type
conf
DOI
10.1109/SiRF.2013.6489465
Filename
6489465
Link To Document