A compact charge-based physical model for AlGaN/GaN HEMTs

Author

Yigletu, F.M. ; Iniguez, B. ; Khandelwal, Sourabh ; Fjeldly, T.A.

Author_Institution

Dept. of Electr. Electron. & Autom. Eng., Univ. Rovira i Virgili, Tarragona, Spain

fYear

2013

fDate

21-23 Jan. 2013

Firstpage

174

Lastpage

176

Abstract

This work presents a physical compact model for AIGaN/GaN HEMT devices. An analytical model of the drain current has been developed based on models of the charge density in the 2DEG channel but considering only a single energy level. The approach resulted in an accurate and simple current model. The model covers all the different operation regions of a device. Excellent agreements with measured I-V characteristics of a device have showed the validation of the model.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; semiconductor device models; wide band gap semiconductors; 2DEG channel; AlGaN-GaN; HEMT; I-V characteristics; analytical model; charge density; charge-based physical model; drain current; Aluminum gallium nitride; Analytical models; Gallium nitride; HEMTs; Logic gates; MODFETs; Semiconductor device modeling; HEMTs; power amplifiers; power transistors; semiconductor device modeling; simulation;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting on

Conference_Location

Austin, TX

Print_ISBN

978-1-4673-1552-4

Electronic_ISBN

978-1-4673-1551-7

Type

conf

DOI

10.1109/SiRF.2013.6489470

Filename

6489470