DocumentCode
1811214
Title
Semi-insulating InP detectors with guard ring electrode
Author
Yatskiv, Roman ; Zdansky, Karel ; Pekarek, Ladislav ; Gorodynskyy, Vladyslav
Author_Institution
Inst. of Photonics & Electron., Acad. of Sci. of the Czech Republic, Prague
fYear
2008
fDate
25-29 May 2008
Firstpage
1
Lastpage
4
Abstract
Particle detectors made with a guard-ring electrode (GR) on a semi-insulating Ti and Zn co-doped InP crystal grown by Czochralski technique are reported. Cathode electrode consisted of an active circular electrode and an encircling GR. Detection performance of particle detectors was measured by pulse-height spectra with alpha particles emitted from the 241Am source. An improved energy resolution of the detector with the GR compared to detectors without GR was observed. Applied bias voltage on the GR reduced the leakage current of the detector and improved spectral characteristics at room temperature (RT). The best values of charge collection efficiency 99 % and of energy resolution 0.9 % at 230 K or respectively 17 % and 16 % at RT for the detector with the GR is presented. These results deserve further investigation of InP co-doped with Ti and Zn as suitable material for X- and gamma-ray detectors operating at RT.
Keywords
III-V semiconductors; X-ray detection; crystal growth from melt; doping; gamma-ray detection; indium compounds; particle detectors; titanium; zinc; Czochralski technique; InP:Zn,Ti; X-ray detectors; active circular electrode; alpha particles; bias voltage; cathode electrode; codoping; crystal growth; gamma-ray detectors operating; guard ring electrode; pulse height spectra; semiinsulating detectors; temperature 230 K; temperature 293 K to 298 K; Alpha particles; Cathodes; Electrodes; Energy resolution; Indium phosphide; Particle measurements; Pulse measurements; Radiation detectors; Voltage; Zinc; InP; guard-ring; radiation detector; semi-insulating;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location
Versailles
ISSN
1092-8669
Print_ISBN
978-1-4244-2258-6
Electronic_ISBN
1092-8669
Type
conf
DOI
10.1109/ICIPRM.2008.4702894
Filename
4702894
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