• DocumentCode
    1811214
  • Title

    Semi-insulating InP detectors with guard ring electrode

  • Author

    Yatskiv, Roman ; Zdansky, Karel ; Pekarek, Ladislav ; Gorodynskyy, Vladyslav

  • Author_Institution
    Inst. of Photonics & Electron., Acad. of Sci. of the Czech Republic, Prague
  • fYear
    2008
  • fDate
    25-29 May 2008
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Particle detectors made with a guard-ring electrode (GR) on a semi-insulating Ti and Zn co-doped InP crystal grown by Czochralski technique are reported. Cathode electrode consisted of an active circular electrode and an encircling GR. Detection performance of particle detectors was measured by pulse-height spectra with alpha particles emitted from the 241Am source. An improved energy resolution of the detector with the GR compared to detectors without GR was observed. Applied bias voltage on the GR reduced the leakage current of the detector and improved spectral characteristics at room temperature (RT). The best values of charge collection efficiency 99 % and of energy resolution 0.9 % at 230 K or respectively 17 % and 16 % at RT for the detector with the GR is presented. These results deserve further investigation of InP co-doped with Ti and Zn as suitable material for X- and gamma-ray detectors operating at RT.
  • Keywords
    III-V semiconductors; X-ray detection; crystal growth from melt; doping; gamma-ray detection; indium compounds; particle detectors; titanium; zinc; Czochralski technique; InP:Zn,Ti; X-ray detectors; active circular electrode; alpha particles; bias voltage; cathode electrode; codoping; crystal growth; gamma-ray detectors operating; guard ring electrode; pulse height spectra; semiinsulating detectors; temperature 230 K; temperature 293 K to 298 K; Alpha particles; Cathodes; Electrodes; Energy resolution; Indium phosphide; Particle measurements; Pulse measurements; Radiation detectors; Voltage; Zinc; InP; guard-ring; radiation detector; semi-insulating;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
  • Conference_Location
    Versailles
  • ISSN
    1092-8669
  • Print_ISBN
    978-1-4244-2258-6
  • Electronic_ISBN
    1092-8669
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2008.4702894
  • Filename
    4702894