Modifying the improved light-output intensity of AlGaInP-based LEDs by nanoporous alimina

Author

Wang, Chien-Chun ; Liu, Chien-Chih ; Chong, Kwok-Keung ; Hung, Chen-I ; Yeong-Her Wang ; Houng, Mau-Phon

Author_Institution

Inst. of Electro-Opt. Sci. & Eng., Nat. Cheng-Kung Univ., Tainan

fYear

2008

fDate

25-29 May 2008

Firstpage

1

Lastpage

4

Abstract

This investigation describes the development of AlGaInP light-emitting diodes (LEDs) with a nanometer diameter of porous anodic alumina (PAA) films which are formed by anodization technique to improve and modify the light extraction efficiency. The pore-widening time was changed for surface modulation to obtain the optimum light extraction efficiency. The diameter of nano-pores varies from 30 nm to 60 nm and the interpore spacing is about 75 nm. The light output intensity of the PAA LEDs with 40 minutes pore-widening is 1.39 times that of conventional LEDs. PAA films can effectively reduce critical angle loss, Fresnel loss and be used as scattering center to improve the light extraction.

Keywords

III-V semiconductors; aluminium compounds; anodisation; gallium compounds; indium compounds; light emitting diodes; AlGaInP; LED; anodization; critical angle loss; interpore spacing; light extraction efficiency; light-emitting diodes; pore-widening time; porous anodic alumina films; scattering center; size 30 nm to 60 nm; surface modulation; time 40 min; Aluminum oxide; Cities and towns; Light emitting diodes; Nanoporous materials; Optical films; Optical modulation; Optical reflection; Refractive index; Space technology; Surface morphology; light-emitting diodes; nanoporous alumina;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Conference_Location

Versailles

ISSN

1092-8669

Print_ISBN

978-1-4244-2258-6

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2008.4702899

Filename

4702899