Tuning InAs/InP(001) quantum dot emission from 1.55 to 2 μm by varying cap-layer growth rate in metalorganic vapor phase epitaxy

Author

Michon, A. ; Hostein, R. ; Patriarche, G. ; Beaudoin, G. ; Gogneau, N. ; Beveratos, A. ; Robert-Philip, I. ; Sagnes, I. ; Laurent, S. ; Sauvage, S. ; Boucaud, P.

Author_Institution

CNRS, Lab. de Photonique et de Nanostruct.

fYear

2008

fDate

25-29 May 2008

Firstpage

1

Lastpage

4

Abstract

This contribution shows that the control of the cap-layer growth rate of InAs/InP(001) quantum dots grown by metalorganic vapor phase epitaxy allows to control their emission wavelength. By varying the cap-layer growth rate over a factor 12, the emission is tuned between 1.55 and 2 mum.

Keywords

III-V semiconductors; MOCVD; indium compounds; optical tuning; photoluminescence; semiconductor growth; semiconductor quantum dots; vapour phase epitaxial growth; InAs-InP; cap-layer growth rate; emission wavelength; metalorganic vapor phase epitaxy; photoluminescence; quantum dots; tuning; wavelength 1.55 mum to 2 mum; Epitaxial growth; Epitaxial layers; Gas lasers; Laser tuning; Molecular beam epitaxial growth; Optical control; Quantum dots; Quantum well lasers; Substrates; Temperature; 2 μm; InAs/InP(001); MOVPE; cap-layer growth rate; quantum dots;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Conference_Location

Versailles

ISSN

1092-8669

Print_ISBN

978-1-4244-2258-6

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2008.4702909

Filename

4702909