Ultra low turn-on voltage and high-current InP DHBT with a pseudomorphic In0.37Ga0.63As0.89Sb0.11 base

Author

Chen, Shu-Han ; Wang, Sheng-Yu ; Chen, HS ln-Yuan ; Teng, Kuo-Hung ; Chyi, Jen-Inn

Author_Institution

Dept. of Electr. Eng., Nat. Central Univ., Taoyuan

fYear

2008

fDate

25-29 May 2008

Firstpage

1

Lastpage

4

Abstract

We report on the dc and microwave characteristics of an InP/InGaAsSb/InGaAs double heterojunction bipolar transistor grown by solid-source molecular beam epitaxy. The pseudomorphic In_0.37Ga_0.63As_0.89Sb_0.11 base reduces the conduction band offset (DeltaE_C) at the emitter/base (E/B) junction and the base band gap, which leads to a very low VBE turn-on voltage of 0.35 V at 1 A/cm². Current gain of 125 and peak f_T of 238 GHz have been obtained on the devices with an emitter size of 1times10 mum², suggesting that high current capability is achieved due to its type-II lineup at the InGaAsSb/InGaAs base/collector (B/C) junction.

Keywords

III-V semiconductors; conduction bands; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; microwave transistors; DHBT; InP-InGaAsSb-InGaAs; conduction band offset; dc characteristics; high current; microwave characteristics; pseudomorphic base; ultra low turn-on voltage; Cities and towns; Degradation; Double heterojunction bipolar transistors; Frequency; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Low voltage; Molecular beam epitaxial growth; Photonic band gap; InP/InGaAsSb; component; heterojunction bipolar transistors (HBTs); molecular beam epitaxy (MBE); type-II;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Conference_Location

Versailles

ISSN

1092-8669

Print_ISBN

978-1-4244-2258-6

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2008.4702931

Filename

4702931