• DocumentCode
    1812316
  • Title

    Stacked film structured dependence of electromigration in Al-Cu interconnect terminated with W plug

  • Author

    Matsumoto, S. ; Etoh, R. ; Ohtsuka, T. ; Kouzaki, T. ; Ogawa, S.

  • Author_Institution
    Matsushita Electron. Corp., Kyoto, Japan
  • fYear
    1998
  • fDate
    1-3 Jun 1998
  • Firstpage
    113
  • Lastpage
    115
  • Abstract
    We have investigated the stacked film structure dependence of the electromigration (EM) lifetime in AlCu interconnects terminated with W-plugs, the structures of which are Ti-TiN-AlCu-TiN, Ti-AlCu-TiN, and Ti-AlCu-Ti-TiN. It has been clarified that the dependence is caused by the difference in the time to deplete Cu atoms over a critical length. We found that the difference is caused by a reduction in the cross-section of the AlCu portion and the reduced Cu concentration in the AlCu portion which is induced by Al3Ti formation. In addition, the difference is also caused by the increase in the interface between Al3Ti and AlCu, which is the dominant Cu diffusion path
  • Keywords
    aluminium alloys; chemical interdiffusion; copper alloys; diffusion barriers; electromigration; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; integrated circuit testing; interface structure; surface chemistry; tungsten; Al3Ti formation; Al3Ti-AlCu; Al3Ti-AlCu interface; AlCu interconnects; AlCu portion cross-section; AlCu-W; Cu atom depletion; Cu concentration; Ti-AlCu-Ti-TiN; Ti-AlCu-Ti-TiN stack; Ti-AlCu-TiN; Ti-AlCu-TiN stack; Ti-TiN-AlCu-TiN; Ti-TiN-AlCu-TiN stack; W plug termination; critical length; dominant Cu diffusion path; electromigration; electromigration lifetime; stacked film structure dependence; Current density; Electromigration; Grain size; Optical films; Plasma temperature; Plugs; Probability distribution; Spectroscopy; Testing; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Interconnect Technology Conference, 1998. Proceedings of the IEEE 1998 International
  • Conference_Location
    San Francisco, CA
  • Print_ISBN
    0-7803-4285-2
  • Type

    conf

  • DOI
    10.1109/IITC.1998.704766
  • Filename
    704766