Advanced cathode and anode injection control concept for 1200V SC(Schottky controlled injection)-diode

At ISPSD2013, we presented an SC-diode that realizes low forward voltage drop (VF), low reverse recovery loss and low leakage current at high temperature of over 175 °C, with a combination of very low injection efficiency and high carrier lifetime. This paper proposes an advanced low injection cathode concept with N Schottky region enabling the SC-diode to obtain excellent fast recovery characteristics, realizing a range of 10 kH switching frequency. We discuss a balance of injection efficiency between two sides (anode and cathode), which is very important for reducing voltage ringing during reverse recovery under low current turn-on condition of IGBTs. Furthermore, we have obtained high reverse recovery ruggedness by controlling impact ionization position where is only bottom of deep P anode layer.