Electron effective mass determined from experimental electron eigen-energies in InGaAs/InAlas multi-quantum wells

Author

Tanaka, K. ; Kotera, N.

Author_Institution

Dept. of Frontier Sci., Hiroshima City Univ., Hiroshima

fYear

2008

fDate

25-29 May 2008

Firstpage

1

Lastpage

4

Abstract

In a In_0.53Ga_0.47As/In_0.52Al_0.48As multi-quantum wells structure, interband transitions were clearly observed in a photocurrent difference spectrum. Using an assumption that the energy dependence of electron effective mass varied smoothly toward higher energy, its nonparabolicity was explicitly determined from 0.041 m₀ to 0.07 m₀ in conduction quantum well.

Keywords

III-V semiconductors; aluminium compounds; conduction bands; effective mass; eigenvalues and eigenfunctions; gallium arsenide; indium compounds; photoconductivity; photoelectron spectra; photoemission; semiconductor quantum wells; In_0.53Ga_0.47As-In_0.52Al_0.48As; conduction band; conduction quantum well; electron effective mass; electron eigenenergies; interband transition; nonparabolicity; photocurrent difference spectrum; photocurrent spectra; semiconductor multiquantum well; Effective mass; Electrons; Equations; III-V semiconductor materials; Indium compounds; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Photoconductivity; Quantum well devices; Electron effective mass; MQWs; eigen-energy; nonparabolicity;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Conference_Location

Versailles

ISSN

1092-8669

Print_ISBN

978-1-4244-2258-6

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2008.4702953

Filename

4702953