The 150 mm RC-IGCT: A device for the highest power requirements

Author

Wikstrom, Tobias ; Arnold, Martin ; Stiasny, Thomas ; Waltisberg, Christoph ; Ravener, Hendrik ; Rahimo, Munaf

Author_Institution

Semicond., ABB Switzerland Ltd., Lenzburg, Switzerland

fYear

2014

fDate

15-19 June 2014

Firstpage

91

Lastpage

94

Abstract

A 4500V RC-IGCT switching more than 10 kA in both switch and diode mode was developed for application in cascaded multilevel topologies. The performance was facilitated by using most of a 150 mm silicon wafer for a single device. Furthermore, the stray inductance of the gate bushing inductance was lowered an order of magnitude, and the use of an outer ring gate contributed significantly to lower impedance on the device itself. Adjustment of the di/dt choke led to significant reduction of total losses. FCE as a means of loss optimization was investigated.

Keywords

elemental semiconductors; silicon; thyristors; FCE; RC-IGCT; cascaded multilevel topology; diode mode; gate bushing inductance; loss optimization; outer ring gate; reverse-conducting integrated gate commutated thyristor; silicon wafer; size 150 mm; stray inductance; switch mode; total losses reduction; voltage 4500 V; Anodes; Inductance; Inductors; Logic gates; Semiconductor diodes; Silicon; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices & IC's (ISPSD), 2014 IEEE 26th International Symposium on

Conference_Location

Waikoloa, HI

ISSN

1943-653X

Print_ISBN

978-1-4799-2917-7

Type

conf

DOI

10.1109/ISPSD.2014.6855983

Filename

6855983