IGBTs conducting diode-like surge currents

For special failure cases it would be of advantage, if the IGBT can conduct very high currents (surge currents) in the same way as bipolar diodes or thyristors. This paper shows that IGBTs can have a great surge-current capability at higher gate voltages. The limiting short-circuit current of the IGBT is shifted to high values to prevent desaturation. Measurements and simulations will show that the temperature rise during a typical 10 ms sine-shape surge-current pulse is still in controllable ranges, especially when double-side cooling is applied. It will be presented that at surge-current condition the internal IGBT behaviour changes to a diode-like one. Destructions and significant gateoxide ageing can be suppressed, if the gate voltage is adjusted to suitable values.