Evidence of lateral coupling on the carrier dynamics in InAs/InP(311)B quantum dots

Author

Doré, F. ; Labbé, C. ; Folliot, H. ; Nakkar, A. ; Paranthoën, C. ; Chevalier, N. ; Tavernier, K. ; Even, J. ; Loualiche, S. ; Lagarde, D. ; Balocchi, A. ; Marie, X.

Author_Institution

UMR FOTON (Fonctions Opt. pour les Technol. de l´´Inf.), INSA, Rennes

fYear

2008

fDate

25-29 May 2008

Firstpage

1

Lastpage

4

Abstract

We present an evidence of lateral coupling between InAs/InP(311)B quantum dots (QD) embedded in a quaternary alloy at high dot surface density (8.3times10¹⁰ QD.cm^-2). This coupling is highlighted using time-resolved photoluminescence at different detection energies between low and high dot surface density.

Keywords

III-V semiconductors; carrier lifetime; indium compounds; photoluminescence; semiconductor quantum dots; time resolved spectra; tunnelling; InAs-InP; carrier dynamics; detection energies; dot surface density; lateral coupling; quantum dots; quaternary alloy; time-resolved photoluminescence; tunnel assisted lateral carrier diffusion; Gallium arsenide; Indium phosphide; Photoluminescence; Power lasers; Quantum dot lasers; Quantum dots; Semiconductor lasers; Stacking; Temperature; Threshold current; InAs quantum dots; coupling; time resolved photoluminescence;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Conference_Location

Versailles

ISSN

1092-8669

Print_ISBN

978-1-4244-2258-6

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2008.4702968

Filename

4702968