Characteristics improvement of 4H-SiC using termination with P-Well enclosure in P-Plus floating guard rings for 1700V DMOSFETs

In this work, a novel edge termination device structure with multiple P-Wells enclosure in P+ floating guard rings is proposed. The device performances between conventional FGRs and proposed structures are systematically compared by 2-D device simulation and the Vbd characteristics are also verified experimentally. The Vbd achieved up to 1708V and improved 450V higher as compared to conventional FGRs, with no additional area and process penalty. This achievement can have benefit for speeding up the mass production of low cost 1700V DMOS devices.