Performance evaluation of different SRAM topologies using 180, 90 and 45 nm technology

Author

Shaik, Sadulla ; Jonnala, Prathiba

Author_Institution

Sch. of Electron., Vignan Univ., Vadlamudi, India

fYear

2013

fDate

5-6 Dec. 2013

Firstpage

15

Lastpage

20

Abstract

The design of various standard SRAM topologies with different technologies has been designed and tested for delay and power dissipation with respect to the different supply voltages. For this consideration, different topologies viz. 6T, 7T, 8T, 9T and 10T SRAM cells have taken. And these cells are designed using generic process development kit (gpdk) 45, 90 and 180 nm technologies. And all these are tested in cadence tool. The detailed analysis about these cells functionality and their characteristic behavior with the applied parameter of supply voltage is presented. The results of the delay, power dissipation with respect to the Vdd are plotted using MATLAB software. Also their layouts were designed and tabulated their areas.

Keywords

SRAM chips; performance evaluation; transistors; MATLAB software; SRAM cells; SRAM topologies; cadence tool; generic process development kit; performance evaluation; power dissipation; supply voltage parameter; Delays; Layout; Power dissipation; SRAM cells; Topology; Transistors; SRAM design; low power; optimization; subthreshold SRAM;

fLanguage

English

Publisher

ieee

Conference_Titel

Renewable Energy and Sustainable Energy (ICRESE), 2013 International Conference on

Conference_Location

Coimbatore

Type

conf

DOI

10.1109/ICRESE.2013.6927819

Filename

6927819