Advanced 300mm 0.13μm BCD technology from 5V to 80V with highly reliable embedded Flash

Author

Iwamoto, Ken ; Kori, M. ; Terada, C. ; Doguchi, T. ; Mihara, Mitsuharu ; Kasa, Y. ; Ukai, K. ; Ujiie, Y. ; Uehara, Hideyuki ; Hamanaka, C. ; Tanaka, B. ; Wada, Kazuyoshi ; Shimizu, Shogo ; Shukuri, S. ; Izumi, N. ; Mifuji, M.

Author_Institution

Device Dev. Group, Rohm Co., Ltd., Hamamatsu, Japan

fYear

2014

fDate

15-19 June 2014

Firstpage

402

Lastpage

405

Abstract

This paper demonstrates the advanced 300mm 0.13μm BCD platform with high flexibility. This platform brings about the various combinations from ten kinds of device options and three kinds of wiring options. Especially, for DMOS which plays an important role on the BCD platform, the best in class low Rdson is realized on Si-bulk. Furthermore, the highly reliable Flash memory cell is embedded on the 0.13μm BCD platform. This cell shows the excellent retention reliability of more than 20 years under 150°C after 100K erase/write cycles can be estimated.

Keywords

BIMOS integrated circuits; flash memories; integrated circuit reliability; BCD technology; DMOS platform; reliable embedded flash memory; retention reliability; size 0.13 mum; size 300 mm; temperature 150 C; time 20 yr; voltage 5 V to 80 V; wiring options; Automotive engineering; CMOS integrated circuits; Flash memory cells; Performance evaluation; Reliability; Standards; Wiring;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices & IC's (ISPSD), 2014 IEEE 26th International Symposium on

Conference_Location

Waikoloa, HI

ISSN

1943-653X

Print_ISBN

978-1-4799-2917-7

Type

conf

DOI

10.1109/ISPSD.2014.6856061

Filename

6856061