A 10 Mbps SiGe BiCMOS Transceiver for Operation Down to Cryogenic Temperatures

Author

Finn, Steven ; Yuan, Jiahui ; Krithivasan, Ram ; Najafizadeh, Laleh ; Cheng, Peng ; Cressler, John D.

Author_Institution

Georgia Inst. of Technol., Atlanta

fYear

2007

fDate

Sept. 30 2007-Oct. 2 2007

Firstpage

115

Lastpage

118

Abstract

A 10 Mbps wire-line transceiver compatible with the RS-485 standard is implemented in SiGe BiCMOS technology. This general purpose SiGe bus transceiver represents the first demonstration of a wide temperature range (-180degC to +27degC) enabled, radiation tolerant as built, wire-line transceiver, and is intended for use in emerging space system avionics platforms. Robust functionality within specifications from -180degC to +27degC is demonstrated.

Keywords

BiCMOS integrated circuits; avionics; cryogenics; germanium compounds; silicon compounds; transceivers; RS-485 standard; SiGe; SiGe BiCMOS transceiver; bit rate 10 Mbit/s; cryogenic temperatures; space system avionics platforms; temperature -180 C to 27 C; wire-line transceiver; BiCMOS integrated circuits; CMOS technology; Cryogenics; Germanium silicon alloys; Heterojunction bipolar transistors; Silicon germanium; Space technology; Temperature; Transceivers; Voltage; Analog circuits; SiGe HBT; cryogenic electronics; device physics; digital circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 2007. BCTM '07. IEEE

Conference_Location

Boston, MA

ISSN

1088-9299

Print_ISBN

978-1-4244-1019-4

Electronic_ISBN

1088-9299

Type

conf

DOI

10.1109/BIPOL.2007.4351849

Filename

4351849