• DocumentCode
    1814758
  • Title

    Geometric model of silicon nanotubes

  • Author

    Lee, Richard K F ; Cox, Barry J. ; Hill, James M.

  • Author_Institution
    Nanomech. Group, Univ. of Wollongong, Wollongong, NSW, Australia
  • fYear
    2010
  • fDate
    22-26 Feb. 2010
  • Firstpage
    365
  • Lastpage
    367
  • Abstract
    In this paper, we extend both the rolled-up and the polyhedral models for single-walled silicon nanotubes with equal bond lengths to models having distinct bond lengths. The silicon nanotubes considered here are assumed to be formed by sp3 hybridization with different bond lengths so that the nanotube lattice is assumed to comprise only skew rhombi. Beginning with the three postulates that (i) all bonds lying on the same helix are equal, (ii) all adjacent bond angles are equal, and (iii) all atoms are equidistant from a common axis of symmetry, we derive exact formulae for the polyhedral geometric parameters such as chiral angles, adjacent bond angles and radius. Finally, some molecular dynamics simulations are undertaken for comparison with the geometric model. These simulations start with equal bond lengths and then stabilize in such a way that two distinct bond lengths emerge.
  • Keywords
    bond angles; bond lengths; chirality; elemental semiconductors; molecular dynamics method; semiconductor nanotubes; silicon; Si; adjacent bond angles; bond angles; bond lengths; bond radius; chiral angles; geometric model; molecular dynamics simulations; nanotube lattice; polyhedral geometric parameters; polyhedral models; single-walled silicon nanotubes; skew rhombi; sp<;sup>;3<;/sup>; hybridization; Computational modeling; Electron tubes; Lattices; Mathematical model; Nanotubes; Predictive models; Silicon; Distinct bond lengths; Geometry; Molecular dynamics; Polyhedral model; Silicon nanotubes;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoscience and Nanotechnology (ICONN), 2010 International Conference on
  • Conference_Location
    Sydney, NSW
  • Print_ISBN
    978-1-4244-5261-3
  • Electronic_ISBN
    978-1-4244-5262-0
  • Type

    conf

  • DOI
    10.1109/ICONN.2010.6045154
  • Filename
    6045154