DocumentCode
1814893
Title
Power semiconductors-innovation and improvement continue to challenge the designer
Author
Grant, D.A.
Author_Institution
Dept. of Electr. & Electron. Eng., Bristol Univ., UK
fYear
1991
fDate
33359
Firstpage
42370
Lastpage
42375
Abstract
While power electronics draws on many disciplines, the power device technology remains crucial and designers need to monitor developments in this area. This has never been truer than it is at the present time, with new devices appearing and others evolving rapidly. The author discusses the GTO, power MOSFET, IGBT, MOS controlled thyristor (MCT), SIT, BJT, double-gated devices, trench technology, soft switching, and the feasibility of using SiC
Keywords
power electronics; power transistors; reviews; semiconductor materials; silicon compounds; thyristors; BJT; GTO; IGBT; MCT; MOS controlled thyristor; SIT; Si; SiC; double-gated devices; power MOSFET; power device technology; power electronics; soft switching; trench technology;
fLanguage
English
Publisher
iet
Conference_Titel
New Developments in Power Semiconductor Devices, IEE Colloquium on
Conference_Location
London
Type
conf
Filename
286021
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