DocumentCode
1815297
Title
Evaluation of SiGeC HBT Varactor using different Collector access and Base-Collector junction Configuration in BiCMOS technologies
Author
Morandini, Yvan ; Larchanche, J.-F. ; Gaquière, Christophe
Author_Institution
STMicroelectron., Crolles
fYear
2007
fDate
Sept. 30 2007-Oct. 2 2007
Firstpage
246
Lastpage
249
Abstract
This paper is focused on the evaluation of SiGeC HBT varactor in BiCMOS technologies. First, we compare a standard collector-base junction varactor with the contribution of specific collector between a low cost SiGeC HBT module. From this, we suggest new types of structure with no additional mask which allows to keep high quality factor and to have a wide tuning range (3:1) between standard diode P+/Nwell and HBT varactor with SIC implant.
Keywords
BiCMOS integrated circuits; Ge-Si alloys; Q-factor; heterojunction bipolar transistors; varactors; BiCMOS technologies; HBT varactor; SIC implant; SiGeC; base-collector junction configuration; quality factor; BiCMOS integrated circuits; Capacitance; Costs; Germanium silicon alloys; Heterojunction bipolar transistors; Implants; Q factor; Silicon carbide; Silicon germanium; Varactors;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting, 2007. BCTM '07. IEEE
Conference_Location
Boston, MA
ISSN
1088-9299
Print_ISBN
978-1-4244-1019-4
Electronic_ISBN
1088-9299
Type
conf
DOI
10.1109/BIPOL.2007.4351880
Filename
4351880
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