• DocumentCode
    1816238
  • Title

    Modeling and implementation of oxide memristors for neuromorphic applications

  • Author

    Chang, Ting ; Sheridan, Patrick ; Lu, Wei

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA
  • fYear
    2012
  • fDate
    29-31 Aug. 2012
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    We report the fabrication, modeling and implementation of nanoscale tungsten-oxide (WOx) memristive (memristor) devices for neuromorphic applications. The device behaviors can be predicted accurately by considering both ion drift and diffusion. Short-term memory and memory enhancement phenomena, and the effects of spike rate, timing and associativity have been demonstrated. SPICE modeling has been achieved that allows circuit-level implementations.
  • Keywords
    biomedical electronics; memristors; nanoelectronics; neural chips; tungsten compounds; SPICE modeling; WOx; ion diffusion; ion drift; memory enhancement phenomena; nanoscale tungsten-oxide memristive devices; neuromorphic applications; oxide memristors; short-term memory; Fabrication; Mathematical model; Memristors; Neuromorphics; Neurons; Timing; Tungsten;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Cellular Nanoscale Networks and Their Applications (CNNA), 2012 13th International Workshop on
  • Conference_Location
    Turin
  • ISSN
    2165-0160
  • Print_ISBN
    978-1-4673-0287-6
  • Type

    conf

  • DOI
    10.1109/CNNA.2012.6331462
  • Filename
    6331462
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1816238