DocumentCode
1816276
Title
Effects of spin relaxation rate of InGaAs/InP of quantum wells on elliptically polarised injection locked VCSELs
Author
Homayounfar, Ali ; Adams, Michael J.
Author_Institution
Dept. of Comput. & Syst. Eng., Univ. of Essex, Colchester
fYear
2008
fDate
25-29 May 2008
Firstpage
1
Lastpage
2
Abstract
Using spin relaxation rate in the range of InGaAs/InP VCSELs subject to polarized injection, it is found that increasing the birefringence and pumping terms, can increase elliptically polarised injection locking stability for slave VCSELs.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; semiconductor lasers; semiconductor quantum wells; spin-lattice relaxation; surface emitting lasers; InGaAs-InP; VCSEL; birefringence; elliptically polarised injection locking stability; quantum wells; spin relaxation; Indium gallium arsenide; Indium phosphide; Injection-locked oscillators; Laser stability; Optical polarization; Optical refraction; Optical transmitters; Optical variables control; Surface emitting lasers; Vertical cavity surface emitting lasers; Injection locked lasers; Instabilities and chaos; Polarization; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location
Versailles
ISSN
1092-8669
Print_ISBN
978-1-4244-2258-6
Electronic_ISBN
1092-8669
Type
conf
DOI
10.1109/ICIPRM.2008.4703070
Filename
4703070
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