DocumentCode
1816469
Title
Origin of magnetic field enhancement in the generation of THz radiation from semiconductor surfaces
Author
Shan, J. ; Heinz, T.F. ; Weiss, C. ; Wallenstein, R. ; Beigang, R.
Author_Institution
Dept. of Phys., Columbia Univ., New York, NY, USA
fYear
2001
fDate
11-11 May 2001
Firstpage
46
Lastpage
47
Abstract
Summary form only given. A common method for the generation of THz radiation utilizes the transient currents produced in the depletion layer of a semiconductor surface by irradiation with an ultrafast laser pulse. Recently there have been several experimental demonstrations of the possibility of strongly increasing the efficiency of this emission process by the application of a static magnetic field. Since the first report of this effect, the Lorentz force has been evoked to explain the phenomenon. Still, to date, no simple model has been developed capable of predicting the large enhancements seen experimentally. We present a theoretical model of this phenomena.
Keywords
carrier mobility; high-speed optical techniques; laser beam effects; magneto-optical effects; microwave photonics; semiconductor device models; submillimetre wave generation; surface phenomena; THz radiation generation; carrier dynamics; depletion layer; emission process; magnetic field enhancement; semiclassical model; semiconductor surfaces; static magnetic field; transient currents; ultrafast laser pulse; Dielectrics; Electronic mail; Lorentz covariance; Magnetic field measurement; Magnetic fields; Optical materials; Optical pulse generation; Optical surface waves; Predictive models; Surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics and Laser Science Conference, 2001. QELS '01. Technical Digest. Summaries of Papers Presented at the
Conference_Location
Baltimore, MD, USA
Print_ISBN
1-55752-663-X
Type
conf
DOI
10.1109/QELS.2001.961830
Filename
961830
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